Product

Model / Specs / Application

Applications

Delayering (Failure Analysis)

Patterned Etch

Specifications

8cm – 22cm gridded Kaufman ion source

<3% non-uniformity over 150 mm (10mm Edge exclusion)

Water cooled, tilting, rotating, substrate shutter

Up to 150mm diameter process surface

SIMS end point detection

Single Wafer Platen

Technology (modules)

Dry Etching

Reactive Ion Etching (RIE)

CAIBE capability

Endpoint detector (optional)

Integration

Full computer control

Distributed Profibus architecture

SECS / HSMS

Ball room style cleanroom installation