Product

Model / Specs / Application

Applications

Materials research and Development

Specifications

High output, low-energy plasma source

6 x 4″ biased target carousel

Independent target biasing for alloy composition control

100mm diameter process surface

< 3% non-uniformity over 75 mm

Substrate plasma cleaning, etching oxidation, nitridation

Water cooled, rotating, shuttered stage, heating up to 500 C

Single wafer load lock stage

Technology (modules)

Soft Etch

Co-Sputtering of 1-3 target materials

Reactive Sputtering

Integration

Full computer control

Ball room style cleanroom installation