Product

Model / Specs / Application

Applications

Patterned Etch

Specifications

22cm – 36cm gridded Kaufman ion source

< 3% non-uniformity over 150 mm.

Water cooled, tilting, rotating

Up to 150mm diameter process surface

SIMS end point detection

3 Wafer Planets

Technology (modules)

Ion Beam Etch (IBE)

  • Dry Etching
  • Reactive Ion Etching (RIE)
  • CAIBE capability
  • Endpoint detector optional

Integration

Full computer control

Profibus distributed architecture

SECS / HSMS

CE Certified

Clean Room Ball installation

Optional Integrated façade